@Article{SilvaNetoMorRosBarRan:2020:InVoMo,
               author = "Silva Neto, Lauro Paulo da and Moraes, Henrique M. and Rossi, 
                         Jos{\'e} Osvaldo and Barroso, Joaquim Jos{\'e} and Rangel, 
                         Elizete Gon{\c{c}}alves Lopes",
          affiliation = "{Universidade Federal de S{\~a}o Paulo (UNIFESP)} and 
                         {Universidade Federal de S{\~a}o Paulo (UNIFESP)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)}",
                title = "Increasing the voltage modulation depth of the RF produced by 
                         NLTL",
              journal = "IEEE Transactions on Plasma Science",
                 year = "2020",
               volume = "48",
               number = "10",
                pages = "3367--3372",
                month = "Oct.",
             abstract = "Lumped nonlinear transmission lines (NLTLs) have been studied for 
                         the generation of radio frequency (RF) signals in the range of the 
                         order of tens of megahertz (MHz) up to a few hundreds of MHz 
                         depending on the nonlinear element used in the LC line. The 
                         oscillations obtained at the output of these lines are applied in 
                         defense mobile platforms and communications systems. Low power 
                         NLTLs use varactor diodes as nonlinear elements, which show a 
                         strong nonlinear effect with capacitance variation of the order of 
                         90% at their p-n junction with the applied voltage, which is an 
                         excellent performance to obtain oscillations at the line output. 
                         However, these semiconductor devices operate at low voltage, 
                         producing small voltage modulation depth (VMD), low power, and 
                         consequently reduced signal range. Looking for increasing the VMD 
                         of the signal generated with NLTLs, this work developed a RF 
                         amplifier using a metaloxidesemiconductor field-effect transistor 
                         (MOSFET) model RD06HVF1. A 30-section line using varactor diodes 
                         MV209 as nonlinear elements can work as an RF source to obtain 
                         oscillations with a frequency of 33.3 MHz at the line output. 
                         Using SPICE simulations, it has been demonstrated that an 
                         amplifier circuit connected to the output of this varactor diode 
                         transmission line can produce an increase of the VMD produced at 
                         line output from 10.7 to 40 V approximately, thus allowing higher 
                         level power to electromagnetic wave propagation and consequently 
                         higher signal range. Experimental comparison using a printed 
                         circuit board (PCB) prototype with the corresponding simulation 
                         will be also shown.",
                  doi = "10.1109/TPS.2020.3000216",
                  url = "http://dx.doi.org/10.1109/TPS.2020.3000216",
                 issn = "0093-3813",
             language = "en",
           targetfile = "silva neto_increasing.pdf",
        urlaccessdate = "28 abr. 2024"
}